General Purpose and Low VCE(sat) Transistors | MJ14002

60 A, 80 V NPN Bipolar Power Transistor

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The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.

  • High Current Capability - IC Continuous = 60 Amperes
  • DC Current Gain - hFE = 15-100 @ IC = 50 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
  • Pb-Free Packages are Available

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Polarity

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

Reference Price

MJ14002G

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CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

Y

NPN

General Purpose

3

60

80

80

5

4

-

15

100

-

300

$11.4648

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