General Purpose and Low VCE(sat) Transistors | MJ802

30 A，90 V，NPN 双极功率晶体管

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概览

此晶体管用作每沟道最高 100 W 音乐功率的互补音频放大器的输出器件。

  • High DC Current Gain - hFE = 25-100 @ IC = 7.5 A
  • Excellent Safe Operating Area
  • Complement to the PNP MJ4502
  • Pb-Free Package is Available

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJ802G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

Y

NPN

General Purpose

0.8

30

90

100

4

1.3

1.3

25

100

2

200

$4.0778

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可靠性数据

Die Related Summary Data

Device: MJ802G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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