General Purpose and Low VCE(sat) Transistors | MJD18002D2

Bipolar NPN Transistor

Obsolete

数据表

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概览

  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA
  • Extremely Low Storage Time Min/Max Guarantees
    Due to the H2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCEsat
  • Characteristics Make It Suitable for PFC Application
  • "6 Sigma" Process Providing Tight
    and Reproductible Parameter Spreads


    Two Versions:
  • MJD18002D2-1: Case 369 for Insertion Mode
  • MJD18002D2: Case 369A for Surface Mount Mode
  • Pb-Free Package is Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJD18002D2T4

Contact Sales

Obsolete

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

NPN

General Purpose

-

-

450

-

-

-

-

-

-

-

50

Price N/A

More Details

MJD18002D2T4G

Contact Sales

Obsolete

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

NPN

General Purpose

-

-

450

-

-

-

-

-

-

-

50

Price N/A

More Details

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