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General Purpose and Low VCE(sat) Transistors | MJD210
概览
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
- Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc - Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
- MJD200 is the complementary NPN device
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MJD210G
Active
Pb
A
H
P
DPAK-3
1
260
TUBE
75
N
PNP
General Purpose
1.8
5
25
40
8
2.5
1.6
45
180
3
12.5
$0.2108
More Details
MJD210RLG
Active
Pb
A
H
P
DPAK-3
1
260
REEL
1800
N
PNP
General Purpose
1.8
5
25
40
8
2.5
1.6
45
180
3
12.5
$0.2133
More Details
MJD210T4G
Active
Pb
A
H
P
DPAK-3
1
260
REEL
2500
N
PNP
General Purpose
1.8
5
25
40
8
2.5
1.6
45
180
3
12.5
$0.198
More Details
NJVMJD210T4G
Active
Pb
A
H
P
DPAK-3
1
260
REEL
2500
N
PNP
General Purpose
1.8
5
25
40
8
2.5
1.6
45
180
3
12.5
$0.3136
More Details
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