General Purpose and Low VCE(sat) Transistors | MJD45H11(LEGACY FAIRCHILD)

8 A, 80 V PNP Power Bipolar Junction Transistor

已停产

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概览

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

  • Audio amplification
  • Audio Amplifiers
  • Electrically Similar to Popular D44H/D45H Series
  • Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • These Devices are Pb-Free and are RoHS Compliant

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

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参考价格

MJD45H11TF

联系销售

已停产

CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2000

No

PNP

General Purpose

1

8

80

-

5

1.5

-

60

-

-

20

Price N/A

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MJD45H11TM

联系销售

已停产

CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2500

No

PNP

General Purpose

1

8

80

-

5

1.5

-

60

-

-

20

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: MJD45H11TM

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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