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General Purpose and Low VCE(sat) Transistors | MJE200
概览
该双极功率晶体管适用于低电压、低功率和高增益音频放大器应用。MJE200 (NPN) 和 MJE210 (PNP) 为互补器件。
- Collector-Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc - High DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc
hFE = 45 (Min) @ IC = 2.0 Adc
hFE = 10 (Min) @ IC = 5.0 Adc - Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc - High Current-Gain - Bandwidth Product -
fT = 65 MHz (Min) @ IC = 100 mAdc - Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB - Pb-Free Packages are Available
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Obsolete
Pb
A
H
P
TO-225-3
NA
0
BLKBX
500
N
NPN
General Purpose
1.8
5
25
-
-
-
-
45
180
65
15
Price N/A
More Details
MJE200G
Active
Pb
A
H
P
TO-225-3
NA
0
BLKBX
500
Y
NPN
General Purpose
1.8
5
40
-
8
2.5
1.6
45
180
65
15
$0.3067
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