General Purpose and Low VCE(sat) Transistors | MJE350

0.5 A, 300 V PNP Bipolar Power Transistor

量产中

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概览

The PNP Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.

  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
  • Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

MJE350G

联系销售

量产中

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

PNP

General Purpose

-

0.5

300

-

3

-

-

30

240

-

20

10.85 x 7.60 x 2.70

$0.3293

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可靠性数据

Die Related Summary Data

Device: MJE350G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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