General Purpose and Low VCE(sat) Transistors | MJE4343

16 A，160 V，NPN 双极功率晶体管

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概览

该双极功率晶体管适用于大功率音频放大器应用和高电压开关稳压器电路。MJE4343 和 MJE4353 为互补器件。

  • High Collector-Emitter Sustaining Voltage -

    VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC
    = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

MJE4343

联系销售

已停产

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

No

-

General Purpose

3.5

16

-

-

-

-

-

15

-

1

125

Price N/A

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MJE4343G

联系销售

Last Shipments

CAD Model

Pb

A

H

P

TO-247

340L

NA

0

TUBE

30

No

NPN

General Purpose

3.5

16

160

160

7

3.9

3.9

15

-

1

125

Price N/A

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可靠性数据

Die Related Summary Data

Device: MJE4343G

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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