General Purpose and Low VCE(sat) Transistors | MJE4353

16 A，160 V，PNP 双极功率晶体管

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该双极功率晶体管适用于大功率音频放大器应用和高电压开关稳压器电路。MJE4343 和 MJE4353 为互补器件。

  • High Collector-Emitter Sustaining Voltage -

    VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC
    = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE4353

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Obsolete

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

PNP

General Purpose

-

-

160

-

-

-

-

15

-

1

125

Price N/A

More Details

MJE4353G

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Obsolete

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

PNP

General Purpose

-

-

160

-

-

-

-

15

-

1

125

Price N/A

More Details

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