General Purpose and Low VCE(sat) Transistors | MMBT5551M3

高电压 NPN 双极晶体管

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该高电压 NPN 双极晶体管是我们受欢迎的 SOT-23 三引线器件的副产品。该器件适用于通用开关应用，采用 SOT-723 表面贴装封装。该器件适用于板空间非常宝贵的低功率表面贴装应用。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MMBT5551M3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.2

0.06

160

180

6

1

-

80

250

-

0.64

$0.0181

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NSVMMBT5551M3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.2

0.06

160

180

6

1

-

80

250

-

0.64

$0.0367

More Details

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可靠性数据

Die Related Summary Data

Device: MMBT5551M3T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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