General Purpose and Low VCE(sat) Transistors | MMJT9410

NPN 双极功率晶体管

Obsolete

数据表

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概览

NPN 硅

  • Collector -Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc
  • Low Collector -Emitter Saturation Voltage VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc
  • SOT-223 Surface Mount Packaging Schematic
  • Pb-Free Package is Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MMJT9410T1

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Obsolete

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

3

235

REEL

1000

N

-

General Purpose

-

-

-

-

-

-

-

60

-

-

3

Price N/A

More Details

MMJT9410T1G

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Obsolete

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

3

260

REEL

1000

N

NPN

General Purpose

-

-

30

-

-

-

-

60

-

-

3

Price N/A

More Details

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