General Purpose and Low VCE(sat) Transistors | MSB709-RT1

PNP Bipolar Transistor

Obsolete

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概览

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.

  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Pb-Free Package is Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MSB709-RT1

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Obsolete

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CAD Model

Pb

A

H

P

SC-59-3

318D-04

1

235

REEL

3000

N

-

General Purpose

-

-

45

-

-

-

-

210

340

-

0.2

Price N/A

More Details

MSB709-RT1G

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Obsolete

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CAD Model

Pb

A

H

P

SC-59-3

318D-04

1

260

REEL

3000

N

PNP

General Purpose

-

-

45

-

-

-

-

210

340

-

0.2

Price N/A

More Details

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