General Purpose and Low VCE(sat) Transistors | MSD42SW

高电压 NPN 双极晶体管

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此高电压 NPN 双极晶体管适用于通用放大器应用。此器件采用 SC-70/SOT-323 封装，适合低功率表面贴装应用。

  • Pb-Free Package is Available

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MSD42SWT1

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Obsolete

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

235

REEL

3000

N

NPN

General Purpose

0.5

0.15

300

-

-

-

-

25

200

-

0.15

Price N/A

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MSD42SWT1G

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Active

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

260

REEL

3000

N

NPN

General Purpose

0.5

0.15

300

300

6

-

-

25

200

-

0.15

$0.0276

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可靠性数据

Die Related Summary Data

Device: MSD42SWT1G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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