General Purpose and Low VCE(sat) Transistors | MSD42W

High Voltage NPN Bipolar Transistor

量产中

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概览

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package, which is designed for low power surface mount applications.

  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

MSD42WT1G

联系销售

量产中

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

260

REEL

3000

No

NPN

General Purpose

0.5

0.15

300

300

6

-

-

40

-

-

0.15

2.00 x 2.10 x 0.90

$0.0276

More Details

NSVMSD42WT1G

联系销售

量产中

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

260

REEL

3000

No

NPN

General Purpose

0.5

0.15

300

300

6

-

-

40

-

-

0.15

2.00 x 2.10 x 0.90

$0.0792

More Details

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可靠性数据

Die Related Summary Data

Device: MSD42WT1G

Equivalent to wafer fab process: SST

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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