General Purpose and Low VCE(sat) Transistors | MSD42W

High Voltage NPN Bipolar Transistor

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This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package, which is designed for low power surface mount applications.

  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

Reference Price

MSD42WT1G

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CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

260

REEL

3000

N

NPN

General Purpose

0.5

0.15

300

300

6

-

-

40

-

-

0.15

$0.0276

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NSVMSD42WT1G

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Active

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

260

REEL

3000

N

NPN

General Purpose

0.5

0.15

300

300

6

-

-

40

-

-

0.15

$0.0792

More Details

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可靠性数据

Die Related Summary Data

Device: MSD42WT1G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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