General Purpose and Low VCE(sat) Transistors | NSL12AW

高电流，PNP，低饱和压， 双极晶体管

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概览

低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。

  • High Current Capability (3 A)
  • High Power Handling (Up to 650 mW)
  • Low VCE(s) (170 mV Typical @ 1 A)
  • Small Size
  • Pb-Free Package is Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

NSL12AWT1

联系销售

已停产

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

235

REEL

3000

No

PNP

General Purpose

0.29

2

12

-

-

-

-

100

300

-

0.45

Price N/A

More Details

NSL12AWT1G

联系销售

Last Shipments

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

No

PNP

General Purpose

0.29

2

12

12

5

0.95

0.95

100

300

-

0.45

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: NSL12AWT1G

Equivalent to wafer fab process: SST

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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