N 沟道 MOSFET,20 V,224 mA,带小信号 PNP BJT,30 V,500 mA

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30 V,500 mA,PNP BJT,带 20 V,224 mA,N 沟道 MOSFET

  • Portable Devices
  • RoHS Compliant

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

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VCBO (V)

VEBO (V)

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VBE(on) (V)

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NSM3005NZTAG

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CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

3000

Y

PNP

General Purpose

0.4

0.5

30

40

5

1.1

1

40

100

-

0.8

$0.1601

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