General Purpose and Low VCE(sat) Transistors | NSS1001CL

Bipolar Transistor -100V, -2.5A PNP Low VCE(sat) PNP Single LFPAK8

量产中

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概览

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications, AEC-Q101 qualified, PPAP capable.

  • Load switch
  • Gate driver buffer
  • DC-DC converter
  • Traction inverter
  • LED driver
  • Solar inverter
  • Large Current Capacity
  • Low collector to emitter saturation voltage
  • High speed switching
  • High allowable power dissipation

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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参考价格

NSS1001CLTWG

联系销售

量产中

CAD Model

Pb

A

H

P

LFPAK8 3.3x3.3, 0.65P

760AD

1

260

REEL

3000

No

PNP

Single

0.16

2.5

100

120

7

1.2

~NA~

140

400

~NA~

2.2

3.30 x 3.30 x 1.05

$0.2133

More Details

NSVS1001CLTWG

联系销售

量产中

CAD Model

Pb

A

H

P

LFPAK8 3.3x3.3, 0.65P

760AD

1

260

REEL

3000

No

PNP

Single

0.16

2.5

100

120

7

1.2

~NA~

140

400

~NA~

2.2

3.30 x 3.30 x 1.05

$0.2347

More Details

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可靠性数据

Die Related Summary Data

Device: NSS1001CLTWG

Equivalent to wafer fab process: BP STD LINEAR

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产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BP STD LINEAR

10

20757261636

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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