General Purpose and Low VCE(sat) Transistors | NSS1001CL

Bipolar Transistor -100V, -2.5A PNP Low VCE(sat) PNP Single LFPAK8

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This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications, AEC-Q101 qualified, PPAP capable.

  • Load switch
  • Gate driver buffer
  • DC-DC converter

  • Traction inverter
  • LED driver
  • Solar inverter

  • Large Current Capacity
  • Low collector to emitter saturation voltage
  • High speed switching
  • High allowable power dissipation

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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NSS1001CLTWG

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Pb

A

H

P

LFPAK8 3.3x3.3, 0.65P

760AD

1

260

REEL

3000

F

PNP

Single

0.16

2.5

100

120

7

1.2

~NA~

140

400

~NA~

2.2

$0.2133

More Details

NSVS1001CLTWG

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CAD Model

Pb

A

H

P

LFPAK8 3.3x3.3, 0.65P

760AD

1

260

REEL

3000

F

PNP

Single

0.16

2.5

100

120

7

1.2

~NA~

140

400

~NA~

2.2

$0.2347

More Details

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