General Purpose and Low VCE(sat) Transistors | NSS12100M3

低 VCE(sat) 晶体管，PNP，12 V，1.0 A

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低 VCE(sat) 双极晶体管是具有超低饱和电压 VCE(sat) 和高电流增益能力的微型表面贴装器件。此类器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

  • Mobile phones
  • Digital Camera
  • PDA

  • High Continuous Current Capability
  • Low VCE(sat) (typically 150mV at 500mA)
  • Small Size 1.2 mm x 1.2 mm
  • This is a Pb-Free Device

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

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VBE(on) (V)

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NSS12100M3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

Y

PNP

Low VCE(sat)

0.06

1

12

12

5

1.15

1.2

120

-

-

0.48

$0.16

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可靠性数据

Die Related Summary Data

Device: NSS12100M3T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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