General Purpose and Low VCE(sat) Transistors | NSS12100XV6

低饱和压晶体管，PNP，12 V，1.0 A

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低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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NSS12100XV6T1G

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CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

N

PNP

Low VCE(sat)

0.44

1

12

12

5

1.15

1.15

100

-

-

0.65

$0.1285

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NSV12100XV6T1G

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CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

Y

PNP

Low VCE(sat)

0.44

1

12

12

5

1.15

1.15

100

-

-

0.65

$0.1511

More Details

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可靠性数据

Die Related Summary Data

Device: NSS12100XV6T1G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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