General Purpose and Low VCE(sat) Transistors | NSS12600CF8

12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Obsolete

数据表

产品

相似产品推荐

概览

Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

Tools and Resources

Product services, tools and other useful resources related to NSS12600CF8

CAD Model

CAD模型

物质成分

产品更改通知

产品列表

如需购买产品或样品，请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS12600CF8T1G

Contact Sales

Obsolete

相似产品推荐
CAD Model

Pb

A

H

P

ChipFET-8

1206A-03

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.06

-

12

-

-

-

-

250

-

100

2.75

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.