General Purpose and Low VCE(sat) Transistors | NSS35200CF8T1G

Low VCE(sat) Transistor, PNP, 35 V, 2.0 A

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概览

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

  • DC/DC Converter
  • Complimentary Driver
  • Supply line Load Switch
  • Current Extention & Low Drop Out Regulation
  • Battery Charging, Linear & Pulsed
  • Cathode Florescent Lamp drive
  • Peripheral Driver - LEDs, Motors, Relays
  • Very Low Saturation
  • High Current Switching 2A DC, 7A Peak
  • High Current Gain
  • High Cut Off Frequency
  • Low Profile Package
  • Linear Gain (Beta)
  • This is a Pb-Free Device

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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参考价格

NSS35200CF8T1G

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Last Shipments

CAD Model

Pb

A

H

P

ChipFET-8

1206A-03

1

260

REEL

3000

No

PNP

Low VCE(sat)

0.3

2

35

55

5

0.85

0.875

100

400

100

2.75

Price N/A

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可靠性数据

Die Related Summary Data

Device: NSS35200CF8T1G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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