3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor

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概览

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.

  • Voltage regulation
  • Power management for portable devices
  • Switching regulator
  • Inductive load driver
  • Battery chargers
  • Computing products
  • Portable devices
  • Low Collector-Emitter Saturation Voltage
  • High DC Current Gain
  • High Current-Gain Bandwidth Product
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • NSS40301MZ4 is NPN complimentary device
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS40300MZ4T1G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

1000

Y

PNP

Low VCE(sat)

0.4

3

40

40

6

1

0.9

175

350

-

2

$0.1813

More Details

NSS40300MZ4T3G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

4000

Y

PNP

Low VCE(sat)

0.4

3

40

40

6

1

0.9

175

350

-

2

$0.1525

More Details

NSV40300MZ4T1G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

1000

Y

PNP

Low VCE(sat)

0.4

3

40

40

6

1

0.9

175

350

-

2

$0.1708

More Details

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