安森美半导体的 e2 PowerEdge 系列低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。典型应用有便携式和电池供电产品(例如蜂窝电话和无绳电话、PDA、计算机、打印机、数码相机和 MP3 播放器)中的 DC-DC 转换器和功率管理。其它应用有大容量存储产品(例如磁盘驱动器和磁带驱动器)中的低压电机控制。在汽车行业中,它们可用于安全气囊部署和各种仪表盘。高电流增益允许 e2PowerEdge 器件直接从 PMU 的控制输出驱动,而线性增益 (Beta) 使其成为模拟放大器的理想组件。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Reference Price
NSS60200LT1G
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
Y
PNP
Low VCE(sat)
0.22
2
60
80
7
0.9
0.85
150
-
100
0.54
$0.096
More Details
NSV60200LT1G
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
Y
PNP
Low VCE(sat)
0.22
2
60
80
7
0.9
0.85
150
-
100
0.54
$0.1067
More Details
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可靠性数据
Die Related Summary Data
Device: NSS60200LT1G
Equivalent to wafer fab process: SST
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
SST
0
4654891639
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)