General Purpose and Low VCE(sat) Transistors | NSS60200L
概览
安森美半导体的 e2 PowerEdge 系列低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。典型应用有便携式和电池供电产品（例如蜂窝电话和无绳电话、PDA、计算机、打印机、数码相机和 MP3 播放器）中的 DC-DC 转换器和功率管理。其它应用有大容量存储产品（例如磁盘驱动器和磁带驱动器）中的低压电机控制。在汽车行业中，它们可用于安全气囊部署和各种仪表盘。高电流增益允许 e2PowerEdge 器件直接从 PMU 的控制输出驱动，而线性增益 (Beta) 使其成为模拟放大器的理想组件。
- Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
- High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
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NSS60200LT1G
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
Y
PNP
Low VCE(sat)
0.22
2
60
80
7
0.9
0.85
150
-
100
0.54
$0.096
More Details
NSV60200LT1G
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
Y
PNP
Low VCE(sat)
0.22
2
60
80
7
0.9
0.85
150
-
100
0.54
$0.1067
More Details
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