General Purpose and Low VCE(sat) Transistors | NST3906F3T5G

PNP 双极晶体管

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PNP 双极晶体管是我们受欢迎的 SOT23、SOT323、SOT563、SOT963 三引线器件的副产品。该器件适用于通用放大器应用，采用 SOT1123 表面贴装封装。该器件适用于板空间非常宝贵的低功率表面贴装应用。

  • PNP General Purpose Switching Transistor

  • hFE, 100-300
  • Low VCE(sat), 0.4 V
  • Reduces Board Space
  • This is a Pb-Free Device

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NST3906F3T5G

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CAD Model

Pb

A

H

P

SOT-1123-3

524AA

1

260

REEL

8000

Y

PNP

General Purpose

0.4

0.2

40

40

5

0.95

-

100

300

250

0.36

$0.0393

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可靠性数据

Die Related Summary Data

Device: NST3906F3T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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