General Purpose and Low VCE(sat) Transistors | NST65011M

双匹配 NPN XSTR 65V

量产中

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数据表

购买

概览

这些晶体管采用超小 SOT-363 封装，适用于便携式产品。对其进行组装可产生一对高度匹配所有参数的器件，无需成本高昂的微调。应用包括电流镜像、差分感应和平衡放大器、混音器、检测器和限制器。提供互补 PNP 对等型号 NST65010MW6T1G。

  • Current Gain Matching to 10%
  • Base−Emitter Voltage Matched to 2 mV
  • Drop−In Replacement for Standard Device
  • NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

NST65011MW6T1G

联系销售

量产中

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Yes

Dual NPN

General Purpose

6

0.1

65

80

6

0.95

0.77

200

500

100

0.38

2.00 x 2.10 x 1.10

$0.0624

More Details

NSVT65011MW6T1G

联系销售

量产中

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Yes

Dual NPN

General Purpose

6

0.1

65

80

6

0.95

0.77

200

500

100

0.38

2.00 x 2.10 x 1.10

$0.0748

More Details

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可靠性数据

Die Related Summary Data

Device: NST65011MW6T1G

Equivalent to wafer fab process: SST

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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