General Purpose and Low VCE(sat) Transistors | NST846BMX2

100 mA, 65 V, NPN Bipolar Transistor in SOT-883

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The NPN Bipolar Transistor is designed for use in amplification and switching applications. The device is housed in the SOT-883 package, which is designed for lower power surface mount applications. Because of its small size, it is suited for use in smartphone, smart−watch, or many other portable/wearable applications where board space comes at a premium.

  • Voltage amplification
  • Power amplification
  • Switching/Interfacing from ICs to higher power rails
  • Temperature sensor
  • Oscillator
  • Laptops
  • Tablets
  • Smart watches / wearables
  • Smartphones
  • Small footprint: 1.0 x 0.6 mm
  • Low Profile: 0.4 mm max thickness
  • High continuous current capability

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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参考价格

NST846BMX2T5G

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量产中

CAD Model

Pb

A

H

P

X2DFN-3

714AC

1

260

REEL

8000

No

NPN

General Purpose

0.25

0.1

65

80

6

0.7

0.66

200

450

100

0.165

1.00 x 0.60 x 0.37

$0.0333

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可靠性数据

Die Related Summary Data

Device: NST846BMX2T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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