General Purpose and Low VCE(sat) Transistors | NZT660A

PNP低饱和晶体管

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概览

这些器件设计为具有高电流增益和低饱和电压，连续集电极电流最高可达3A。

  • This product is general usage and suitable for many different applications.

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NZT660A

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

PNP

General Purpose

0.5

3

60

60

5

1.25

1

250

550

75

2

$0.1868

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可靠性数据

Die Related Summary Data

Device: NZT660A

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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