General Purpose and Low VCE(sat) Transistors | TIP112

NPN外延硅达林顿晶体管

Obsolete

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概览

  • This product is general usage and suitable for many different applications.

  • 具有内置基极-发射极分流电阻的单片架构
  • TIP115/116/117的补充器件
  • 高DC电流增益：hFE= 1000 @ VCE= 4 V，IC= 1 A（最小值）
  • 低集电极-发射极饱和电压
  • 工业用途

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

TIP112TU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

2.5

2

100

100

5

-

2.8

500

-

-

2

Price N/A

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