TIP112

NPN外延硅达林顿晶体管

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数据表

CAD模型

概览

应用

This product is general usage and suitable for many different applications.

特性

具有内置基极-发射极分流电阻的单片架构
TIP115/116/117的补充器件
高DC电流增益：h_FE= 1000 @ V_CE= 4 V，I_C= 1 A（最小值）
低集电极-发射极饱和电压
工业用途

物质成分

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Reference Price

TIP112TU

Obsolete

TO-220-3

340AT

TUBE

1000

NPN

General Purpose

2.5

100

2.8

500

Price N/A

产品型号:

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General Purpose and Low VCE(sat) Transistors | TIP112

NPN外延硅达林顿晶体管

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