General Purpose and Low VCE(sat) Transistors | TIP115

PNP外延硅达林顿晶体管

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  • This product is general usage and suitable for many different applications.

  • 具有内置基极-发射极分流电阻的单片架构
  • 高DC电流增益：hFE=1000 @ VCE=-4V，IC=-3A（最小值）
  • 低集电极-发射极饱和电压
  • 工业用途
  • TIP110/111/112的补充器件

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