IGBTs | HGTD1N120BNS

IGBT，1200V，NPT

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概览

HGTD1N120BNS9A 基于非穿通型（NPT）IGBT 设计。 IGBT非常适合许多在中等频率下运行、非常需要低传导损耗的高压开关应用，例如UPS、光伏逆变器、电机控制和电源。

  • 不间断电源

  • 2.7 A，1200 V，在 TC = 110°C时
  • 低饱和电压：VCE(sat) = 2.5 V @ IC = 1.0 A
  • 典型下降时间...................TJ = 150°C时为258ns
  • 短路额定值
  • 低传导损耗

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTD1N120BNS9A

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

1200

2.7

2.5

-

0.09

0.07

-

-

14

8

10

60

No

$0.6237

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可靠性数据

Die Related Summary Data

Device: HGTD1N120BNS9A

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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