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此绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的超场截止沟槽结构,为要求苛刻的开关应用提供出色性能,提供低导通状态电压,并最大限度降低开关损耗。此款 IGBT 非常适合 UPS 和太阳能应用。该器件结合了一个软性和快速的组合封装续流二极管,带有低正向电压。
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Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
NGTB25N120FL3WG
Active
Pb
A
H
P
TO-247
NA
0
TUBE
30
Y
-
1200
25
1.7
3
0.7
1
90
12
136
-
-
349
Yes
$2.5637
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可靠性数据
Die Related Summary Data
Device: NGTB25N120FL3WG
Equivalent to wafer fab process: IGN IGBT
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGN IGBT
12
24556821265
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)