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采用新型场截止第 4 代 IGBT 技术且通过了 AEC-Q101 认证。AFGB30T65SQDN 具有最佳性能以及低导通损耗和开关损耗,可在各种应用中实现高效运行。
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V(BR)CES Typ (V)
IC Max (A)
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Reference Price
AFGB30T65SQDN
Active
Pb
A
H
P
D2PAK-3 / TO-263-2
1
260
REEL
800
Y
-
650
30
1.6
1.5
0.16
0.786
131
-
56
-
-
220
Yes
$2.2571
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