IGBTs | AFGB40T65SQDN

IGBT, 650V FS4 High speed version, for OBC application in D2pak

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概览

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

  • Automotive On Board Charge
  • Automotive DC/DC converter for HEV

  • EV/PHEV

  • AEC-Q101 qualified
  • VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Low VF soft recovery co-packaged diode

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

AFGB40T65SQDN

联系销售

量产中

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

Yes

-

650

40

1.6

1.5

0.229

0.858

131

-

76

-

-

238

Yes

$2.6054

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可靠性数据

Die Related Summary Data

Device: AFGB40T65SQDN

Equivalent to wafer fab process: IGN IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

26965138077

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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