AFGHL75T65SQDC: IGBT with SiC copack diode

Datasheet: IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247
Rev. 1 (237kB)
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Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter
特性   优势
     
  • SiC schottky co-pack diode
 
  • zero diode recovery losses
  • Fast switching IGBT
 
  • Low Eon and Eoff losses
  • AEC-Q101 qualified
 
  • automotive compatible
  • Tight parameter distribution and Positive temperature co-efficient
 
  • easy paralelleing
应用   终端产品
  • Totem pole bridgeless PFC
  • On Board chargers
  • HV DC-DC converters
 
  • Hybrid Electric Vehicles
  • Battery electric vehicles
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数据表 (1)  
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封装
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类型
外形
类型
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类型
数量
AFGHL75T65SQDC Active
AEC Qualified
PPAP Capable
Pb-free
AFGHL75T65SQDC, IGBT - Hybrid IGBT 650 V TO-247-3LD 340CX NA Tube 450 $5.7937
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
AFGHL75T65SQDC  
 $5.7937 
Pb
A
P
 Active   
650
75
1.6
1.45
0.24
0.48
139
375
Yes
TO-247-3LD
外形
340CX   
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