IGBTs | AFGY160T65SPD-B4

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

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概览

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

  • EV traction inverter
  • Electrical Vehicles
  • AEC-Q101 Qualified and PPAP Capable
  • Vcesat and Vth binning
  • Positive Temperature Co-Efficient
  • 100% of the Parts are Dynamically Tested
  • Short circuit ruggedness > 6us @ 25°C
  • This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Copacked with Soft, Fast Recovery Extremefast Diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

AFGY160T65SPD-B4

联系销售

量产中

CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

30

Yes

-

650

240

1.6

1.4

5.7

12.4

132

~NA~

163

6

~NA~

882

Yes

$7.7908

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可靠性数据

Die Related Summary Data

Device: AFGY160T65SPD-B4

Equivalent to wafer fab process: 3B,IJ

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

1

6249407224

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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