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IGBT,1250v,15A,短路阳极
Obsolete
安森美半导体的短路阳极沟槽 IGBT 采用先进的场截止沟槽和短路阳极技术,可为开关应用提供出色的导通和开关性能。该器件可在并联配置中运行,且具有出色的雪崩功能。该器件适用于电感加热和微波炉。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
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ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
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Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
Obsolete
Pb
A
H
P
TO-3P-3L
NA
0
TUBE
450
N
-
1250
15
2.25
2
0.5
0.74
-
-
129
-
-
136
Yes
Price N/A
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可靠性数据
Die Related Summary Data
Device: FGA15S125P
Equivalent to wafer fab process: IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)