IGBTs | FGA30N65SMD

IGBT，650V，30A，场截止

Obsolete

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概览

Fairchild 的新型场截止第 2 代 IGBT 采用新型场截止 IGBT 工艺，为太阳能逆变器、UPS、焊接机、电感加热、电信、ESS 和 PFC 等务必保证低导通和开关损耗的应用。

  • 最大结温：TJ =175oC
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压：VCE(sat) =1.98 V（典型值）@ IC = 30 A
  • 快速开关
  • 紧密的参数分布
  • 符合 RoHS 标准

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

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FGA30N65SMD

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

650

30

1.98

2.1

0.208

0.716

35

-

87

-

-

300

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA30N65SMD

Equivalent to wafer fab process: 3B,IM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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