IGBTs | FGA30S120P

1300V, 30A，短路阳极 IGBT

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概览

飞兆半导体的短路阳极沟道 IGBT 系列采用先进的场截止沟道和短路阳极技术，为软开关应用提供卓越的导通和开关性能。该器件可并行配置，具有极佳的雪崩能力。该器件为感应加热和微波炉而设计。

  • 消费型设备

  • 高速开关
  • 低饱和电压：VCE(sat) =1.75V @ IC = 30A
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA30S120P

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1300

30

1.75

1.7

1.22

1.3

-

-

78

-

-

348

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA30S120P

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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