IGBTs | FGA50N100BNTD

IGBT，1000V，NPT 沟槽

Obsolete

数据表

购买

概览

该 1000V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术，提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。此器件为 UPS 和焊接机等硬开关应用提供最佳性能。

  • 不间断电源
  • 其他工业

  • 高速开关
  • 低饱和电压：VCE(sat) = 2.5V @ IC = 60A
  • 高输入阻抗

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA50N100BNTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1000

35

2.5

1.2

-

-

1.2

-

275

-

-

156

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA50N100BNTDTU

Equivalent to wafer fab process: 3B,IK

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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