IGBTs | FGAF20S65AQ

IGBT, 650 V, 20A Field Stop Trench

Obsolete

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概览

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications

  • Industrial application
  • PFC

  • Air-conditioner
  • Welder
  • IH
  • Industrial

  • Maximum junction temperature : TJ = 175°C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 20A
  • High input impedance
  • 100% of the Parts tested for ILM
  • Fast switching
  • Tightened parameter distribution
  • RoHS compliant
  • IGBT with monolithic reverse conducting diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Trr Typ (ns)

Irr Typ (A)

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Co-Packaged Diode

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FGAF20S65AQ

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Obsolete

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

30

N

-

650

20

1.4

1.3

0.056

0.2

235

~NA~

38

~NA~

~NA~

75

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGAF20S65AQ

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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