IGBTs | FGAF40N60UFD

600V，PT IGBT

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概览

安森美半导体的场截止 IGBT 采用新型场截止 IGBT 技术，为太阳能逆变器、UPS、焊接机和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。

  • 运动控制-家用设备

  • 高速开关： Eoff =12uJ/A
  • 低饱和电压： VCE(sat) = 2.3 V @ IC = 20A
  • 高输入阻抗

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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FGAF40N60UFDTU

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

-

600

20

2.3

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGAF40N60UFDTU

Equivalent to wafer fab process: 3B,IL

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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