IGBT,650V,40A,场截止沟槽

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概览

安森美半导体的新型场截止第 4 代 RC IGBT 系列采用新型场截止 IGBT 技术,为消费和工业应用的 PFC 转换器提供最佳性能。

  • Consumer Appliances
  • PFC, Welder
  • Industrial application

  • Maximum junction temperature : TJ = 175°C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
  • High input impedance
  • 100% of the Parts tested for ILM
  • Fast switching
  • Tightened parameter distribution
  • RoHS compliant
  • IGBT with monolithic reverse conducting diode

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGAF40S65AQ

Active

CAD Model

Pb

A

H

P

TO-3PF-3L

NA

0

TUBE

30

Y

-

650

40

1.6

1.2

0.062

0.132

274

-

75

-

-

94

No

$1.1386

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