IGBTs | FGB3245G2_F085

IGBT，450V，23A，1.3V，320mJ，EcoSPARK® II，N 沟道点火

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FGB3245G2_F085 和 FGD3245G2 是使用安森美半导体的 EcoSPARK® 2 技术设计的 N 沟道 IGBT，有助于消除外部保护电路。该技术适用于在汽车点火系统的严酷环境中驱动线圈，在更高的运行温度下也能提供出色的 Vsat 和 SCIS 能源能力。逻辑电平门极输入具有 ESD 保护，以及一个集成式门极电阻。集成式齐纳电路会将 IGBT 的集极-射极电压限制在 450 V，可实现需要更高火花电压的系统。

  • Ignition systems
  • Automotive
  • Engine Management

  • SCIS 能量 = 320 mJ（需 TJ = 25°C）
  • 逻辑电平栅极驱动
  • 低饱和电压
  • 符合 AEC Q101 标准
  • 符合RoHS标准

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FGB3245G2-F085

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Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

Y

-

450

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2600

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-

-

-

150

Yes

$1.6109

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可靠性数据

Die Related Summary Data

Device: FGB3245G2-F085

Equivalent to wafer fab process: IGN IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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