IGBTs | FGD3050G2

IGBT，500V，27A，1.3V，300mJ，DPAKEcoSPARK® II，N 沟道点火

量产中

数据表

购买

概览

N 沟道点火 IGBT，用于汽车点火线圈驱动器电路和插头应用上的线圈。

  • SCIS Energy = 300mJ at TJ = 25°C
  • Logic Level Gate Drive
  • Qualified to AEC Q101
  • RoHS Compliant

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与FGD3050G2相关的产品服务、工具和其他资源

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可靠性数据

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGD3050G2

联系销售

量产中

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Yes

-

495

32

1.1

-

-

300

1.6

-

22

-

300

150

-

$1.1344

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可靠性数据

Die Related Summary Data

Device: FGD3050G2

Equivalent to wafer fab process: IGN IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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