IGBTs | FGD3325G2_F085

IGBT，250V，25A，1.35V，330mJ，EcoSPARK®2，N 沟道点火

Obsolete

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概览

  • 在 TJ = 25oC 时，SCIS 能量 = 330 mJ
  • 逻辑电平栅极驱动
  • 符合 AEC Q101 标准
  • 符合RoHS标准

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

Reference Price

FGD3325G2-F085

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

250

-

-

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1200

-

21

-

-

150

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGD3325G2-F085

Equivalent to wafer fab process: IGN IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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