IGBTs | FGD3440G2-F085V

IGBT，400V，25A，1.30V，335mJ，DPAKEcoSPARK® II，N 沟道点火

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概览

  • Body Electronics
  • SCIS Energy = 335mJ at TJ = 25℃
  • Logic Level Gate Drive
  • Qualified to AEC Q101
  • RoHS Compliant

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可靠性数据

Die Related Summary Data

Device: FGD3440G2-F085V

Equivalent to wafer fab process: IGN IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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