IGBTs | FGD3440G2_F085

IGBT，400V，25A，1.30V，335mJ，DPAKEcoSPARK® II，N 沟道点火

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概览

  • 人体电子

  • 在 TJ = 25℃时，SCIS 能量 = 335 mJ
  • 逻辑电平栅极驱动
  • 符合 AEC Q101 标准
  • 符合RoHS标准

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V(BR)CES Typ (V)

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Co-Packaged Diode

Reference Price

FGD3440G2-F085

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

-

400

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2000

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24

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166

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$0.9531

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可靠性数据

Die Related Summary Data

Device: FGD3440G2-F085

Equivalent to wafer fab process: IGN IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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