IGBTs | FGH30N60LSD

IGBT，600 V，30A，PT

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概览

FGH30N60LSD IGBT 采用安森美半导体的平面技术，具有卓越的导通性能，为太阳能逆变器、UPS 等低导通损耗是最重要因素的应用中提供最佳性能。

  • 发电和配电
  • 低饱和电压：VCE(sat) =1.1V @ IC = 30A
  • 高输入阻抗
  • 低传导损耗

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGH30N60LSDTU

联系销售

Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

No

-

600

30

1.1

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH30N60LSDTU

Equivalent to wafer fab process: 3B,IL

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

2469245689

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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