IGBTs | FGH30S150P

IGBT，1500v，30A，阳极短路

已停产

数据表

购买

概览

安森美半导体的阳极短路沟槽 IGBT 系列采用先进的场截止沟槽和阳极短路技术，为软开关应用提供优越的导通和开关性能。该器件可以在并行配置下运行，具有优异的雪崩功能。该器件适用于电感加热和微波炉。

  • 高速开关
  • 低饱和电压：VCE(sat) = 1.85 V @ IC = 30 A
  • 高输入阻抗
  • 符合 RoHS 标准

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与FGH30S150P相关的产品服务、工具和其他资源

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物质成分

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可靠性数据

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGH30S150P

联系销售

已停产

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

No

-

1500

30

1.85

1.61

0.9

1.16

-

-

369

-

-

500

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH30S150P

Equivalent to wafer fab process: IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

3

4562573939

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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