IGBTs | FGH40N120AN

IGBT，1200V，NPT

Obsolete

数据表

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概览

安森美半导体的 AN 系列 IGBT 采用 NPT 技术，提供了低导通和开关损耗。AN 系列为感应加热 (IH)、电机控制、通用型逆变器和不中断电源 (UPS) 等应用提供方案。

  • 工业级电机
  • 其他工业
  • 消费电子

  • 高速开关
  • 低饱和电压： VCE(sat)=2.6 V，需 IC=40 A
  • 高输入阻抗
  • RoHS

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Package Type

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MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40N120ANTU

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

1200

40

2.6

-

1.1

2.3

-

-

220

10

-

417

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH40N120ANTU

Equivalent to wafer fab process: IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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